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Low Al and Ti Etch Rate Solutions

Technology Development

The development of conventional cleaning solutions is based on balancing the etch selectivity towards metals and dielectrics with the efficiency of removing residues. New solutions have been developed to decrease Al and Ti etch rates while maintaining performance of the solutions for post-etch residue removal. Design of experiment (DOE) techniques have been used to evaluate a broad range of amine-based formulations to optimize the solutions for low metal etch rates.

For additional information, please contact:
Karen Willwerth
Phone: 510-784-7528
e-mail: Karen.Willwerth@usa.dupont.com