Building on its long history of expertise and innovation in the manufacture, purification, packaging and analysis of fluorinated molecules, DuPont is uniquely positioned to deliver to the industry the high purity fluorinated gases today’s advanced semiconductor processes demand. Combined with our broad foundation in fluorine chemistry comes a product stewardship commitment to provide the physical property, safety and handling information necessary to enable the safe and efficient use of the Zyron® family of gases in plasma based process applications.

Chamber Cleaning Gases

Zyron® 8020 N3 (c-C₄F₈ ), octafluorocyclobutane, is a grade of this familiar oxide etching gas especially designed by DuPont for fast, economical, and low emission cleaning of (PE) CVD chambers.

Zyron® 116 N5 (C₂F₆ ), hexafluoroethane, is the established gas of choice for cleaning many chemical vapor deposition chamber tools, as well as in selected etch processes.

High-Purity Etchants

Zyron® C318 N4 (c-C₄F₈ ), octafluorocyclobutane, is an etchant gas that is widely accepted for etching SiO₂ dielectric layers for most technology node applications. This product has been well received by semiconductor manufacturers worldwide for its excellent value-in-use.

Zyron® 32 N4 (CH₂F₂ ), difluoromethane, is a hydrofluorocarbon produced in high purity for etch applications. Its unique hydrogen-to-fluorine ratio allows its use along with other fluorocarbon gases in several emerging processes for etching silicon-based dielectrics.

Zyron® 23 N3 (CF₃ H), trifluoromethane, is a long-standing gas used as a component in various recipes, predominantly for the etching of silicon dioxide dielectric layers. CF₃ H has also been used for etching a wide variety of other silicon-based dielectric films.

Zyron® 23 N5 (CF₃H ), trifluoromethane, is a long-standing gas used as a component in various recipes, predominantly for the etching of silicon dioxide dielectric layers. CF₃ H has also been used for etching a wide variety of other silicon-based dielectric films.